Contract No. 65 REASOX

Radiation effects on amorphous semiconductor oxides used for flexible and transparent microelectronics



The main objectiv of this project is to provide answers for these questions:

What is the effect of radiation on the structure and properties of an amorphous oxide films (AOS) and how additional defects will influence the electrical properties of AOS based devices before they could be used for outer space application.

1. Designing of experimental setups

2. Selection of the best AOS films in respect with the tolerance at the irradiation

3. Radiation effects on AOS-based devices: MOS capacitors and Schottky diodes

4. Studies about irradiation effects in circuits containing AOS based devices